working voltage: 3.3 to 440 v peak pulse power: 400 w e - cmos c orp. ( www.ecmos.com.tw ) page 1 of 5 4f26n - rev. f001 SMAJ series feature s glass passivated chip 400 w peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle):0.01 % low leakage uni and bidirectional unit excellent clamping capability very fast response time rohs compliant mechan ical data case: molded plastic epoxy: ul 94v - 0 rate flame retardant lead: solderable per mil - std - 750, method 2026 polarity: color band denotes cathode end except bipolar mounting position: any surface mount transient voltage suppressors
working voltage: 3.3 to 440 v peak pulse power: 400 w e - cmos c orp. ( www.ecmos.com.tw ) page 2 of 5 4f26n - rev. f001 SMAJ series maximum ratings(t a =25 note a = 25 c per fig.1 (2)measured on 8.3 ms single half sine - wave or equivalent square wave, duty cycle = 4 pulses per minute maximum (3)v f <3.5v for devices of v br <200v and v f <5.0v for devices of v br >201v ratings and characteristics curves (t a =25 parameter symbol value unit peak power dissipation with a 10/1000s waveform (1) p pp 400 w peak pulse current wih a 10/1000s waveform (1) i pp see next table a power dissipation on infinite heatsink at t l = 75 c p d 1.0 w peak forward surge current, 8.3 ms single half sine - (2) wave unidirectional only i fsm 40 a maximum instantaneous forward voltage at 25 a for (3) unidirectional only v f 3.5/5.0 v operating junction and storage temperature range t j , t stg C 55 to +150 c
working voltage: 3.3 to 440 v peak pulse power: 400 w e - cmos c orp. ( www.ecmos.com.tw ) page 3 of 5 4f26n - rev. f001 SMAJ series ratings and characteristics curves (t a =25
working voltage: 3.3 to 440 v peak pulse power: 400 w e - cmos c orp. ( www.ecmos.com.tw ) page 4 of 5 4f26n - rev. f001 SMAJ series e lectrical characteristics(t a =25
working voltage: 3.3 to 440 v peak pulse power: 400 w e - cmos c orp. ( www.ecmos.com.tw ) page 5 of 5 4f26n - rev. f001 SMAJ series e lectrical characteristics(t a =25
|
